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Updated: Jun 7, 2026

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Effect of magnetic field on the electronic transport in trilayer graphene
Yanping Liu1, Sarjoosing Goolaup, Chandrasekhar Murapaka
1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371.
Abstract:
The perpendicular magnetic field dependence of the longitudinal resistance in trilayer graphene at various temperatures has been systematically studied. For a fixed magnetic field, the trilayer graphene displays an intrinsic semiconductor behavior over the temperature range of 5-340 K. This is attributed to the parabolic band structure of trilayer graphene, where the Coulomb scattering is a strong function of temperature. The dependence of resistance on the magnetic field can be explained by the splitting of Landau levels (LLs). Our results reveal that the energy gap in the trilayer graphene is thermally activated and increases with √B.
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