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Updated: Jun 7, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Photon migration in the presence of a single defect: a perturbation analysis

S Feng, F A Zeng, B Chance

    Applied Optics
    |November 6, 2010
    PubMed

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