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Related Experiment Video

Updated: Jun 7, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Carrier multiplication in graphene.

Torben Winzer¹, Andreas Knorr, Ermin Malic

¹Institut für Theoretische Physik, Technische Universität Berlin, 10623 Berlin, Germany.

|November 9, 2010

Summary

This summary is machine-generated.

Auger processes significantly impact carrier dynamics in graphene, a zero-bandgap semiconductor. This study confirms substantial carrier multiplication, highlighting graphene

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Preparation and Characterization of C60/Graphene Hybrid Nanostructures

Preparation and Characterization of C₆₀/Graphene Hybrid Nanostructures

Published on: May 15, 2018

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Graphene, a zero-bandgap semiconductor, offers a unique platform for studying carrier dynamics.
Carrier relaxation channels are often inefficient in conventional semiconductors.
Auger-type processes, involving carrier multiplication, are of fundamental interest for optoelectronic applications.

Purpose of the Study:

To investigate the role of Auger processes in the carrier dynamics of graphene.
To determine if Auger-type processes significantly influence photoexcited charge carriers in graphene.
To assess the potential of graphene for high-efficiency photodevices.

Main Methods:

Microscopic calculations.
Density matrix formalism.
Theoretical modeling of carrier dynamics.

Main Results:

Auger processes play a significantly strong role in graphene's carrier relaxation dynamics.
Considerable carrier multiplication is predicted in graphene.
Photoexcited charge carriers exhibit unique relaxation pathways.

Conclusions:

Graphene exhibits efficient carrier multiplication due to strong Auger processes.
The findings confirm graphene's potential for developing high-efficiency photodevices.
This research advances the understanding of carrier dynamics in novel semiconductor materials.