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Updated: Jun 6, 2026

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Published on: December 19, 2011
Synaptic activity-responsive element (SARE): A unique genomic structure with an unusual sensitivity to neuronal
Masatoshi Inoue1, Nan Yagishita-Kyo, Mio Nonaka
1Department of Neurochemistry; University of Tokyo Graduate School of Medicine; Bunkyo-ku, Tokyo Japan.
Scientists discovered a Synaptic Activity-Responsive Element (SARE) that links synaptic changes to gene transcription, enabling long-lasting memory formation. This element enhances neuronal gene expression sensitivity to stimuli.
Area of Science:
- Neuroscience
- Molecular Biology
- Genetics
Background:
- Memory formation requires synaptic plasticity and nuclear mRNA synthesis.
- The mechanism linking synaptic changes to gene transcription for memory consolidation is unclear.
Purpose of the Study:
- To investigate how synaptic activity drives gene transcription for stable memory formation.
- To identify regulatory elements responsible for linking synaptic efficacy to nuclear transcription.
Main Methods:
- Identification and characterization of a novel genomic element, the Synaptic Activity-Responsive Element (SARE).
- Analysis of the genomic structure and regulatory function of SARE in relation to the Arc gene.
- Investigating the binding of transcription factors to SARE and its response to neuronal stimuli.
Main Results:
- Discovery of a potent Synaptic Activity-Responsive Element (SARE) located upstream of the Arc gene.
- SARE possesses a unique genomic structure with cooperative binding sites for three transcription factors.
- SARE exhibits unusual responsiveness to neuronal stimuli, acting as a sensitive transcriptional sensor.
Conclusions:
- SARE represents a novel class of transcriptional sensor with high sensitivity to synaptic activity.
- This discovery provides a molecular mechanism for transforming transient synaptic plasticity into stable, long-lasting memory.
- SARE's function sheds light on the intricate regulation of gene expression underlying memory consolidation.
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