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Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light
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Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light

Published on: September 12, 2014

A new type of electrolyte with a light-trapping scheme for high-efficiency quasi-solid-state dye-sensitized solar

Meng Wang1, Xu Pan, Xiaqin Fang

  • 1Institute of Plasma Physics, Chinese Academy of Sciences Hefei, China.

Advanced Materials (Deerfield Beach, Fla.)
|November 12, 2010
PubMed
Abstract

No abstract available in PubMed .

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P-N junction01:11

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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