Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

MOSFET Amplifiers

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Large-scale single-molecule analysis of tau proteoforms.

bioRxiv : the preprint server for biology·2025

Same author

Cadmium phytoextraction by Helianthus annuus (sunflower), Brassica napus cv Wichita (rapeseed), and Chyrsopogon zizanioides (vetiver).

Chemosphere·2020

Same author

A Multicenter Pilot Study on the Clinical Utility of Computational Modeling for Flow-Diverter Treatment Planning.

AJNR. American journal of neuroradiology·2019

Same author

Active phase correction of high resolution silicon photonic arrayed waveguide gratings.

Optics express·2017

Same author

Demographic and mortality analysis of hospitalized children at a referral hospital in Addis Ababa, Ethiopia.

BMC pediatrics·2016

Same author

Prenatal diagnosis of intraventricular hemorrhage in a fetus with congenital diaphragmatic hernia using magnetic resonance imaging.

Minerva ginecologica·2015

Search research articles

Related Experiment Video

Updated: Jun 6, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Photonic page buffer based on GaAs multiple-quantum-well modulators bonded directly over active silicon

A V Krishnamoorthy, J E Ford, K W Goossen

|November 19, 2010

Summary

Researchers developed a 2-kbit photonic page buffer using quantum-well diodes and silicon circuits. This advanced buffer enables faster optical data processing and nonvolatile storage for parallel data streams.

More Related Videos

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Published on: June 8, 2018

Related Experiment Videos

Last Updated: Jun 6, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Published on: June 8, 2018

Area of Science:

Optoelectronics
Integrated Photonics
Semiconductor Device Physics

Background:

The increasing demand for high-speed data processing necessitates advanced buffering solutions.
Existing electronic buffers face limitations in speed and bandwidth for optical data.
Vertical integration of optical and electronic components is crucial for next-generation computing.

Purpose of the Study:

To demonstrate a novel photonic first-in, first-out (FIFO) page buffer.
To achieve high-speed, nonvolatile data buffering for optical interconnects.
To showcase the vertical integration of optoelectronic devices with silicon VLSI.

Main Methods:

Fabrication of a 2-kbit photonic page buffer using gallium arsenide/aluminium-gallium arsenide multiple-quantum-well diodes.
Flip-chip bonding of quantum-well diodes to submicrometer silicon complementary-metal-oxide-semiconductor (CMOS) circuits.
Integration of multiple-quantum-well modulators and detectors directly over active silicon VLSI.

Main Results:

Achieved a data rate of 50-Mpage/s.
Demonstrated nonvolatile storage, asynchronous-to-synchronous conversion, and bandwidth smoothing.
Verified tolerance to jitter/skew, spatial format conversion, and wavelength conversion.
Reported high-speed single-channel testing and real-time array operation.

Conclusions:

The developed photonic chip serves as an effective interface for parallel-accessed optical bit-plane data.
This represents the first smart-pixel array with vertical integration of quantum-well modulators/detectors over active silicon VLSI.
The device offers over 340 transistors per optical input-output, enabling advanced functionalities.