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Updated: Jun 6, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Precision crystal corner cube arrays for optical gratings formed by (100) silicon planes with selective epitaxial
Abstract:
High-quality, micrometer scale, corner cube arrays were grown on (111) silicon substrates by selective epitaxial growth (SEG) techniques. Sixteen different arrays were produced that had periodic corner spacing ranging from 3 to 50 µm. The arrays were formed by suppressing silicon SEG in a regular geometric pattern, producing the three mutually perpendicular (100) smooth crystal planes. For coherent light of 633-nm wavelengtha sharp diffraction pattern of threefold symmetry was observed out to 7 maxima, as well as a retroreflection component.
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