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Updated: Jun 6, 2026
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Morphological impact of zinc oxide layers on the device performance in thin-film transistors
Hendrik Faber1, Martin Klaumünzer, Michael Voigt
1Organic Materials & Devices (OMD), Department of Materials Science, University Erlangen-Nürnberg, Martensstraße 07, 91058, Erlangen, Germany. hendrik.faber@ww.uni-erlangen.de
Abstract:
Zinc oxide thin-films are prepared either by spin coating of an ethanolic dispersion of nanoparticles (NP, diameter 5 nm) or by spray pyrolysis of a zinc acetate dihydrate precursor. High-resolution electron microscopy studies reveal a monolayer of particles for the low temperature spin coating approach and larger crystalline domains of more than 30 nm for the spray pyrolysis technique. Thin-film transistor devices (TFTs) based on spray pyrolysis films exhibit higher electron mobilities of up to 24 cm2 V(-1) s(-1) compared to 0.6 cm2 V(-1) s(-1) for NP based TFTs. These observations were dedicated to a reduced number of grain boundaries within the transistor channel.
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