Related Experiment Video
Updated: Jun 6, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Long-range ordered single-crystal graphene on high-quality heteroepitaxial Ni thin films grown on MgO(111)
Takayuki Iwasaki1, Hye Jin Park, Mitsuharu Konuma
1Max-Planck-Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany. t.iwasaki@fkf.mpg.de
Abstract:
Large-area single crystal monolayer graphene is synthesized on Ni(111) thin films, which have flat terraces and no grain boundaries. The flat single-crystal Ni films are heteroepitaxially grown on MgO(111) substrates using a buffer layer technique. Low-energy electron diffraction and various spectroscopic methods reveal the long-range single crystallinity and uniform monolayer thickness of the graphene. When transferred onto an insulating wafer, continuous millimeter-scale single domain graphene is obtained.

