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Temperature dependent emission quenching for silicon nanoclusters.

A Podhorodecki1, G Zatryb, J Misiewicz

  • 1Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland.

Journal of Nanoscience and Nanotechnology
|December 8, 2010
PubMed
Summary

Silicon rich silicon oxide films exhibit unique photoluminescence properties. Their emission bands at 1.6 and 2.4 eV show temperature and excitation power density dependent behavior, offering insights into nanocluster characteristics.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Silicon rich silicon oxide (SRSO) films are synthesized using reactive magnetron sputtering.
  • These films contain silicon nanoclusters, which are crucial for their optical properties.

Purpose of the Study:

  • To investigate the photoluminescence (PL) properties of SRSO films.
  • To understand the temperature and excitation power density dependence of PL spectra.

Main Methods:

  • Reactive magnetron sputtering for SRSO film synthesis.
  • Photoluminescence spectroscopy measurements.
  • Variable temperature and excitation power density analysis.

Main Results:

  • Two distinct emission bands were observed in the PL spectra, centered at 1.6 eV and 2.4 eV.

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  • The temperature dependence of PL intensities for these bands differs significantly but shows a clear correlation.
  • PL intensity versus temperature exhibits a strong dependence on excitation power density at low temperatures.

    • Conclusions:

    • The observed photoluminescence behavior is attributed to silicon nanoclusters within the SRSO matrix.
    • The findings provide insights into the fundamental optical processes and potential applications of SRSO materials.