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Irradiated bilayer graphene.

D S L Abergel¹, Tapash Chakraborty

¹Department of Physics and Astronomy, University of Manitoba, Winnipeg, MB, Canada.

|December 8, 2010

Summary

This summary is machine-generated.

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Intense terahertz radiation induces novel dynamical states in gated bilayer graphene, modifying its electronic band structure and density of states, with or without magnetic fields.

Area of Science:

Condensed Matter Physics
Materials Science
Quantum Mechanics

Background:

Gated bilayer graphene exhibits unique electronic properties.
Interaction of materials with intense electromagnetic radiation can lead to exotic quantum phenomena.
Understanding electron dynamics in graphene is crucial for next-generation electronics.

Purpose of the Study:

To investigate the effects of intense terahertz radiation on the electron band structure and density of states in gated bilayer graphene.
To explore the emergence of dynamical states and their impact on electronic properties.
To analyze these effects under varying conditions, including the absence and presence of external magnetic fields.

Main Methods:

Utilized exact diagonalization methods within Floquet theory to model the system.

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Analyzed the electron band structure and density of states.

Investigated the system under conditions of no magnetic field, finite inter-layer bias, and strong magnetic fields.

Main Results:

Terahertz radiation induces dynamical states, significantly modifying the band structure and density of states.
In unbiased systems, dynamical gaps appear, leading to dips in the density of states.
With inter-layer bias, dynamical states emerge within the static gap, exhibiting valley polarization.
In strong magnetic fields, Landau levels couple, forming a near-continuum of dynamical states.

Conclusions:

Intense terahertz radiation provides a powerful tool to engineer the electronic properties of bilayer graphene.
Dynamical states induced by radiation can create tunable band gaps and valley-polarized states.
The findings offer insights into light-matter interactions in low-dimensional materials and potential applications in optoelectronics.