Light extraction efficiency enhancement of GaN-based light emitting diodes on n-GaN layer using a SiO2 photonic
H W Huang1, K Y Lee, J K Huang
1Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan, ROC.
Abstract:
In this paper, GaN-based LEDs with a SiO2 photonic quasi-crystal (PQC) pattern on an n-GaN layer by nano-imprint lithography (NIL) are fabricated and investigated. At a driving current of 20 mA on Transistor Outline (TO)-can package, the better light output power of LED III (d = 1.2 microm) was enhanced by a factor of 1.20. After 1000 h life test (55 degrees C/50 mA) condition, Normalized output power of LED with a SiO2 PQC pattern (LED III (d = 1.2 microm)) on an n-GaN layer only decreased by 5%. This results offer promising potential to enhance the light output power of commercial light-emitting devices using the technique of nano-imprint lithography.
