Ultraviolet lasing action in ZnO nanosheets
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Updated: Jun 6, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Dingke Zhang1, Shijian Chen, Zhaoqi Deng
1Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory for UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, PR China.
Abstract:
We report room-temperature ultraviolet lasing action in large quantities of uniform multilayer ZnO nanosheets grown by a vapor-transport method via thermal evaporation of Zn powder. An excellent multimode lasing emission at a center wavelength of 390 nm with a mode linewidth less than 0.33 nm occurs above an excitation threshold of 8 mJ pulse(-1) cm(-2). The observed multimode lasing action may be attributed to microcavity effect and low concentration of defects in the nanosheets. We believe that the single-mode lasing emission can be obtained by growing completely uniform nanosheets. ZnO nanosheet is an attractive candidate as gain medium to realize ultraviolet semiconductor diode lasers.
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