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Updated: Jun 6, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Tunable field control over the binding energy of single dopants by a charged vacancy in GaAs

D H Lee1, J A Gupta

  • 1Department of Physics, Ohio State University, Columbus, OH 43210, USA.

Science (New York, N.Y.)
|December 15, 2010
PubMed

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