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Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions

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The effect of electrostatic screening on a nanometer scale electrometer.

Kenneth Maclean¹, Tamar S Mentzel, Marc A Kastner

¹Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States. kenneth.maclean@gmail.com

|December 16, 2010

Summary

Electrostatic screening in nanoscale silicon MOSFET electrometers is influenced by the p-type substrate. Device sensitivity can be tuned by temperature and voltage, maintaining high performance at room temperature.

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Area of Science:

Solid-state physics
Nanotechnology
Electrical engineering

Background:

Nanoscale silicon Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are crucial for sensitive electrical measurements.
Understanding electrostatic interactions is key to optimizing device performance.

Purpose of the Study:

To investigate the impact of electrostatic screening on nanoscale silicon MOSFET electrometer sensitivity.
To explore methods for tuning the screening effect.

Main Methods:

Fabrication of nanoscale silicon MOSFET electrometers on a lightly doped p-type substrate.
Systematic variation of temperature and applied voltages to the device.
Measurement of electrometer sensitivity under different conditions.

Main Results:

The p-type substrate significantly influences the electrostatic screening effect.
Screening rate and magnitude are tunable via temperature and applied voltages, respectively.
The MOSFET electrometer demonstrates high sensitivity to its electrostatic environment even at room temperature.

Conclusions:

Electrostatic screening is a critical factor affecting nanoscale MOSFET electrometer performance.
Temperature and voltage offer viable control mechanisms for optimizing electrometer sensitivity.
These devices maintain significant utility for electrostatic measurements at ambient temperatures.