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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

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Related Experiment Video

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Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

High bandwidth on-chip silicon photonic interleaver.

Lian-Wee Luo1, Salah Ibrahim, Arthur Nitkowski

  • 1School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA.

Optics Express
|December 18, 2010
PubMed
Summary

We developed a silicon photonic interleaver with a 120 GHz bandwidth and a 70 nm flat passband. This device offers C-band operation, low crosstalk, and reconfiguration for fabrication imperfections.

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Last Updated: Jun 5, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

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Published on: April 4, 2017

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
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Area of Science:

  • Photonics
  • Integrated Optics
  • Semiconductor Devices

Background:

  • Optical communication systems require efficient wavelength division multiplexing (WDM) components.
  • Silicon photonics offers a scalable platform for integrated optical devices.
  • Existing interleaving technologies face challenges in bandwidth, flatness, and reconfigurability.

Purpose of the Study:

  • To design and demonstrate a high-performance silicon photonic interleaver.
  • To achieve a wide flat passband and high channel isolation.
  • To incorporate reconfiguration capabilities for practical implementation.

Main Methods:

  • Utilized an asymmetric Mach-Zehnder interferometer (MZI) structure.
  • Integrated three ring resonators coupled to the MZI arms.
  • Optimized the design for C-band operation and characterized its performance.

Main Results:

  • Achieved a 120 GHz 3-dB bandwidth with a 70 nm flat passband.
  • Demonstrated rapid roll-off with a 142 GHz 20-dB bandwidth.
  • Exhibited channel crosstalk as low as -20 dB and full reconfiguration.

Conclusions:

  • The developed silicon photonic interleaver meets key performance metrics for WDM systems.
  • The device's flat passband and low crosstalk are advantageous for optical communication.
  • Reconfiguration capability enhances its robustness against fabrication variations.