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Updated: Jun 5, 2026
Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Very large spot size effect in nanosecond laser drilling efficiency of silicon
Fernando Brandi1, Nicolas Burdet, Riccardo Carzino
1Nanophysics Group, Italian Institute of Technology, Via Morego 30, Genova, Italy. fernando.brandi@iit.it
Abstract:
The effect of the spot diameter in nanosecond excimer laser percussion drilling of through via in silicon wafer is presented. Experimental results show a ten fold increase of the ablation efficiency when decreasing the spot diameter from 220 μm to 9 μm at constant fluence in the range 7.5 J/cm(2) to 13.2 J/cm(2). Such effect is absent when using 60 ps deep-UV laser pulses. A model is developed that explain the findings in terms of plume shielding effect on the laser pulse. The model is successfully applied also on previously published data on deep-UV laser drilling of Polyamide and Alumina.
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