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Published on: November 30, 2012
Ultra-low loss Si3N4 waveguides with low nonlinearity and high power handling capability
Ming-Chun Tien1, Jared F Bauters, Martijn J R Heck
1Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA. jtien@ece.ucsb.edu
Abstract:
We investigate the nonlinearity of ultra-low loss Si3N4-core and SiO2-cladding rectangular waveguides. The nonlinearity is modeled using Maxwell's wave equation with a small amount of refractive index perturbation. Effective n2 is used to describe the third-order nonlinearity, which is linearly proportional to the optical intensity. The effective n2 measured using continuous-wave self-phase modulation shows agreement with the theoretical calculation. The waveguide with 2.8-μm wide and 80-nm thick Si3N4 core has low loss and high power handling capability, with an effective n2 of about 9×10(-16) cm2/W.

