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In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

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Published on: April 1, 2020

Bandgap control using strained beam structures for Si photonic devices.

Kohei Yoshimoto1, Ryota Suzuki, Yasuhiko Ishikawa

  • 1Department of Materials Engineering, the University of Tokyo, 7-3-1, Hongo Bunkyo, Tokyo 113-8656, Japan.

Optics Express
|December 18, 2010
PubMed
Summary
This summary is machine-generated.

We demonstrate controlling silicon bandgap energy by elastically deforming silicon beams. Bending beams shifts photoluminescence peaks, enabling on-chip wavelength division multiplexing for uncooled integrated circuits.

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Silicon (Si) bandgap energy is crucial for optoelectronic devices.
  • Wavelength fluctuations in uncooled integrated circuits (ICs) limit functionality.
  • Wavelength division multiplexing (WDM) is a key technology for high-capacity optical communication.

Purpose of the Study:

  • To demonstrate control over silicon bandgap energy using micro-mechanical strain.
  • To investigate the relationship between elastic deformation and photoluminescence shifts in silicon.
  • To explore the potential for on-chip WDM implementation through stress application.

Main Methods:

  • Fabrication of micro-mechanically structured silicon beams (250 nm thick, 3 μm wide, 15 μm long).
  • Elastic deformation of silicon beams using an external force.
  • Microscopic photoluminescence spectroscopy to measure peak shifts.
  • Finite element method and deformation potential calculations to analyze strain.

Main Results:

  • Controlled bandgap energy of silicon beams through elastic deformation.
  • Observed red shift in photoluminescence peaks from ~1100 nm to ~1300 nm upon 3 μm downward bending.
  • Generated tensile strain up to ~1.5% on the top surface of deformed beams, correlating with the observed red shift.

Conclusions:

  • Elastic deformation of silicon beams can precisely tune bandgap energy.
  • This technique offers a proof of concept for mitigating wavelength fluctuations in uncooled LSIs.
  • The findings enable the implementation of on-chip wavelength division multiplexing, with potential applications for Germanium (Ge) and Gallium Arsenide (GaAs) beams.