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High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power
B Rudin1, V J Wittwer, D J H C Maas
1Department of Physics, Institute for Quantum Electronics, ETH Zurich, Zurich, Switzerland.
Optics Express
|January 4, 2011
Summary
We developed an integrated semiconductor laser (MIXSEL) that achieves 6.4 W of output power, significantly advancing high-power ultrafast laser technology for industrial and scientific use.
Area of Science:
- Optics and Photonics
- Semiconductor Lasers
- Ultrafast Lasers
Background:
- High-power ultrafast lasers are crucial for industry and science but current systems are complex.
- Optically-pumped VECSELs show promise for high power, and SESAMs enable ultrashort pulses.
- Previous integrated MIXSELs had limited output power (<200 mW).
Purpose of the Study:
- To demonstrate power scaling of the MIXSEL concept.
- To achieve higher output power from an integrated semiconductor laser for ultrafast applications.
- To reduce complexity and cost in high-power laser manufacturing.
Main Methods:
- Utilized optimized quantum dot saturable absorbers in an antiresonant structure.
- Implemented improved thermal management by mounting the MIXSEL structure onto a CVD-diamond heat spreader.
- Employed a simple straight cavity design with only two components.
Main Results:
- Achieved 28-ps pulses at a 2.5-GHz repetition rate.
- Generated an average output power of 6.4 W.
- This represents the highest output power reported for any modelocked semiconductor laser.
Conclusions:
- The power-scaled MIXSEL demonstrates a viable path towards cost-effective, high-power integrated ultrafast semiconductor lasers.
- This technology can meet mass production requirements for industrial and scientific applications.
- Further development could lead to even higher power levels and shorter pulse durations.
