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Updated: Jun 5, 2026

Preparation and Reactivity of a Triphosphenium Bromide Salt: A Convenient and Stable Source of Phosphorus(I)
Published on: November 22, 2016
Bis(diphenyl-phospho-rothio-yl) tris-ulfide
Monika Kulcsar1, Anca Silvestru, Marius Vonas
1Faculty of Chemistry and Chemical Engineering, Babes-Bolyai University, Arany Janos Street 11, RO-400028 Cluj-Napoca, Romania.
This study details the molecular structure of a novel phosphorus-sulfur compound, C(24)H(20)P(2)S(5). Key findings include specific bond geometries and crystal packing driven by hydrogen bonds and pi-pi stacking interactions.
Area of Science:
- Organophosphorus chemistry
- Crystal engineering
- Solid-state chemistry
Background:
- Understanding the structural diversity of phosphorus-sulfur compounds is crucial for developing new materials.
- The synthesis and characterization of novel organophosphorus compounds provide insights into bonding and reactivity.
Purpose of the Study:
- To elucidate the detailed molecular and crystal structure of the title compound, C(24)H(20)P(2)S(5).
- To investigate the intermolecular interactions governing the solid-state arrangement of the molecules.
Main Methods:
- Single-crystal X-ray diffraction was employed to determine the three-dimensional molecular and crystal structure.
- Analysis of bond angles, torsion angles, and intermolecular contacts (hydrogen bonds, pi-pi stacking) was performed.
Main Results:
- The compound exhibits trans arrangement of P atoms relative to the S(3) group and cisoid geometry in S=P-S-S systems (average torsion angle -56.7°).
- Dihedral angles between phenyl rings attached to P atoms are 87.33° and 75.67°.
- Molecules form chains via C-H⋯S hydrogen bonds, with chains further linked by π-π stacking interactions (centroid-to-centroid distance 3.795 Å).
Conclusions:
- The study provides a comprehensive structural analysis of C(24)H(20)P(2)S(5), highlighting its unique geometric features.
- The crystal packing is governed by a combination of weak C-H⋯S hydrogen bonds and π-π stacking, influencing the overall solid-state architecture.
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