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Self-organized criticality in an interface-growth model with quenched randomness
1Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan.
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics
|January 15, 2011
Summary
We investigated a modified Kardar-Paris-Zhang equation with disorder. A self-organized critical state and anomalous scaling with roughness exponent α∼0.63 were numerically found.
Area of Science:
- Physics
- Statistical Mechanics
- Nonlinear Dynamics
Background:
- The Kardar-Paris-Zhang (KPZ) equation is a fundamental model for interface growth.
- Understanding the effects of quenched disorder on such systems is crucial for various physical phenomena.
Purpose of the Study:
- To investigate a modified KPZ model incorporating a disorder-dependent driving force.
- To explore the emergence of self-organized criticality and anomalous scaling in this system.
Main Methods:
- Numerical simulations were employed to study the modified KPZ equation.
- Analysis focused on interface dynamics and scaling properties under quenched disorder.
Main Results:
- A self-organized critical state was observed in the modified KPZ model.
- An anomalous scaling law was numerically obtained, characterized by a roughness exponent α∼0.63.
Conclusions:
- The modified KPZ model exhibits self-organized criticality.
- The observed anomalous scaling provides insights into disordered interface growth dynamics.
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