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Updated: Jun 5, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Phonon-induced gaps in graphene and graphite observed by angle-resolved photoemission
Y Liu1, Longxiang Zhang, M K Brinkley
1Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-3080, USA.
Abstract:
Mapping by angle-resolved photoemission spectroscopy of the spectral functions of graphite and graphene layers at low temperatures reveals a heretofore unreported gap of ~ 67 meV at normal emission. This gap persists to room temperature and beyond, and diminishes for increasing emission angles. We show that this gap arises from electronic coupling to out-of-plane vibrational modes at the K(¯) point in the surface Brillouin zone in accordance with conservation laws and selection rules governed by quantum mechanics. Our study suggests a new approach for characterizing phonons and electron-phonon coupling in solids.

