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Updated: Jun 5, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
What is measured in the scanning gate microscopy of a quantum point contact?
Rodolfo A Jalabert1, Wojciech Szewc, Steven Tomsovic
1Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, CNRS-UdS, 23 rue du Loess, B.P. 43, 67034 Strasbourg Cedex 2, France.
Abstract:
The conductance change due to a local perturbation in a phase-coherent nanostructure is calculated. The general expressions to first and second order in the perturbation are applied to the scanning gate microscopy of a two-dimensional electron gas containing a quantum point contact. The first-order correction depends on two scattering states with electrons incoming from opposite leads and is suppressed on a conductance plateau; it is significant in the step regions. On the plateaus, the dominant second-order term likewise depends on scattering states incoming from both sides. It is always negative, exhibits fringes, and has a spatial decay consistent with experiments.
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