Related Experiment Video
Updated: Jun 5, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Lifetime and coherence of two-level defects in a Josephson junction
Yoni Shalibo1, Ya'ara Rofe, David Shwa
1Racah Institute of Physics, The Hebrew University of Jerusalem, Israel.
We studied two-level defect states (TLSs) in Josephson phase qubits. We found decay times depend on interaction strength, while coherence times optimize at intermediate coupling.
Area of Science:
- Quantum computing
- Solid-state physics
- Superconductivity
Background:
- Josephson phase qubits are a leading platform for quantum computation.
- Understanding decoherence mechanisms in qubits is crucial for improving quantum computer performance.
- Two-level defect states (TLSs) in qubit barriers can cause significant noise.
Purpose of the Study:
- To measure the lifetime (T₁) and coherence (T₂) of TLSs in Josephson phase qubit barriers.
- To investigate the relationship between TLS properties and their interaction strength with the qubit.
- To explain the observed T₁ and T₂ behaviors using a theoretical model.
Main Methods:
- Experimental measurement of T₁ and T₂ for TLSs in Josephson phase qubit barriers.
- Systematic variation of interaction strengths between TLSs and qubit systems.
- Theoretical modeling based on the standard TLS model, incorporating phonon-mediated dipole radiation and environmental fluctuations.
Main Results:
- Average decay times (T₁) exhibit a power-law dependence on interaction strengths.
- Average coherence times (T₂) show an optimal performance at intermediate coupling strengths.
- The standard TLS model successfully explains both T₁ and T₂ behaviors.
Conclusions:
- The interaction strength significantly influences qubit decoherence via TLSs.
- Coherence times are maximized at specific, intermediate coupling regimes.
- The standard TLS model provides a robust framework for understanding and mitigating decoherence in Josephson qubits.
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Imperfections in Crystal Structure: Non-Stoichiometric Defects
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

