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Domain wall conductivity in La-doped BiFeO3
J Seidel1, P Maksymovych, Y Batra
1Department of Physics, University of California, Berkeley, California 94720, USA.
Physical Review Letters
|January 15, 2011
Summary
Domain wall conductivity in La-doped bismuth ferrite was investigated. Distinct electronic properties at domain walls influence local conductivity, which can be tuned by doping with oxygen vacancies.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Bismuth ferrite (BiFeO3) is a multiferroic material with potential applications in electronic devices.
- Domain walls in ferroelectric materials can exhibit unique electronic and magnetic properties.
- Understanding domain wall conductivity is crucial for novel device functionalities.
Purpose of the Study:
- To probe the transport physics of domain wall conductivity in La-doped BiFeO3.
- To investigate the influence of distinct electronic properties at domain walls on local conductivity.
- To explore methods for controlling domain wall conductivity.
Main Methods:
- Variable temperature conducting atomic force microscopy (CAFM).
- Piezoresponse force microscopy (PFM).
- Nanoscale current measurements as a function of bias and temperature.
Main Results:
- Domain walls in La-doped BiFeO3 exhibit distinct electronic properties affecting local conductivity.
- Observed conductivity is consistent with a band picture of electronic conduction.
- Chemical doping with oxygen vacancies provides an additional control over wall conductivity.
Conclusions:
- Domain wall conductivity in La-doped BiFeO3 is governed by specific electronic properties.
- Band theory effectively describes the observed electronic conduction at domain walls.
- Oxygen vacancy doping offers a pathway to modulate the conductive state of domain walls.
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