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Updated: Jun 5, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
In situ observation of antisite defect formation during crystal growth
M J Kramer1, M I Mendelev, R E Napolitano
1Division of Materials Science and Engineering, Ames Laboratory, Ames, Iowa, 50011, USA. mjkramer@ameslab.gov
Abstract:
In situ x-ray diffraction (XRD) coupled with molecular dynamics (MD) simulations have been used to quantify antisite defect trapping during crystallization. Rietveld refinement of the XRD data revealed a marked lattice distortion which involves an a axis expansion and a c axis contraction of the stable C11b phase. The observed lattice response is proportional in magnitude to the growth rate, suggesting that the behavior is associated with the kinetic trapping of lattice defects. MD simulations demonstrate that this lattice response is due to incorporation of 1% to 2% antisite defects during growth.
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