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Limits on charge carrier mobility in suspended graphene due to flexural phonons
Eduardo V Castro1, H Ochoa, M I Katsnelson
1Instituto de Ciencia de Materiales de Madrid (CSIC), Madrid, Spain.
Abstract:
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature T≳10 K, and the resistivity increases quadratically with T. Flexural phonons limit the intrinsic mobility down to a few m(2)/V s at room T. Their effect can be eliminated by applying strain or placing graphene on a substrate.
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