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Random semiconductor lasers: scattered versus Fabry-Perot feedback.

S Kalusniak1, H J Wünsche, F Henneberger

  • 1Institut für Physik, Humboldt Universität zu Berlin, Newtonstraße 15, 12489 Berlin, Germany.

Physical Review Letters
|January 15, 2011
PubMed
Summary

Quantum well structures with imperfections demonstrate random laser action. Microresonators reveal that random feedback requires higher gain but doesn't significantly raise thresholds, impacting laser dynamics.

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Area of Science:

  • Materials Science
  • Optics and Photonics
  • Condensed Matter Physics

Background:

  • Quantum well structures, specifically (Zinc, Cadmium)Oxide/Zinc Oxide, can exhibit random laser action due to growth imperfections.
  • Microresonators offer a platform to directly compare cavity feedback with scattered feedback in these systems.

Purpose of the Study:

  • To investigate and compare cavity and scattered feedback mechanisms in (Zinc, Cadmium)Oxide/Zinc Oxide quantum well random lasers.
  • To analyze the gain requirements and threshold behavior of random lasing in the presence of Mie scatterers.
  • To understand the influence of random feedback on modal gain distribution and its implications for laser dynamics.

Main Methods:

  • Fabrication of microresonators containing (Zinc, Cadmium)Oxide/Zinc Oxide quantum well structures.

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  • Experimental measurements of lasing thresholds and gain.
  • Theoretical analysis of feedback mechanisms and modal gain.
  • Inclusion and study of Mie scatterers within the semiconductor cavity.

    • Main Results:

    • Pure random lasing typically necessitates a higher gain compared to the standard Fabry-Perot lasing regime.
    • The incorporation of Mie scatterers into the semiconductor-based cavity did not substantially elevate the lasing threshold.
    • Random feedback was observed to induce a nuanced modal gain distribution, potentially significant for laser dynamics.

    Conclusions:

    • Random laser action in imperfect quantum wells is feasible but requires careful consideration of gain.
    • Mie scatterers do not significantly impede random lasing in these microresonator structures.
    • The modal gain distribution influenced by random feedback is a key factor for understanding laser dynamics.