Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Maximum Power Transfer01:16

Maximum Power Transfer

Numerous practical applications within engineering disciplines, such as telecommunications, necessitate optimizing power delivery to a connected load. This pursuit, however, entails inherent internal losses, which can either equal or exceed the power supplied to the load. The Thevenin equivalent circuit is helpful in finding the maximum power a linear circuit can deliver to a load. It is assumed in this context that the load resistance can be adjusted.
By substituting the entire circuit with...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET Amplifiers01:17

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Narrow linewidth III-V-on-SiN laser with extended frequency chirp capability based on micro-transfer printing for high resolution distributed acoustic sensing.

Optics express·2025
Same author

Thermally induced sideband generation in silicon-on-insulator cladding modulated Bragg notch filters.

Optics express·2023
Same author

Design of a suspended germanium micro-antenna for efficient fiber-chip coupling in the long-wavelength mid-infrared range.

Optics express·2019
Same author

Suspended silicon waveguides for long-wave infrared wavelengths.

Optics letters·2018
Same author

-1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond.

Optics express·2017
Same author

Suspended silicon mid-infrared waveguide devices with subwavelength grating metamaterial cladding.

Optics express·2016

Related Experiment Video

Updated: Jun 5, 2026

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

High-performance 90° hybrid based on a silicon-on-insulator multimode interference coupler.

R Halir1, G Roelkens, A Ortega-Moñux

  • 1Departamento Ingeniería de Comunicaciones, ETSI Telecomunicación, Universidad de Málaga, 29010 Málaga, Spain. robert.halir@ic.uma.es

Optics Letters
|January 26, 2011
PubMed
Summary

We developed a novel multimode interference coupler (MMI) for high-index-contrast photonics. This compact design minimizes phase errors, achieving excellent performance for optical hybrid applications.

More Related Videos

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

Related Experiment Videos

Last Updated: Jun 5, 2026

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
09:03

A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response

Published on: January 7, 2019

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

Area of Science:

  • Photonics
  • Integrated Optics
  • Waveguide Technology

Background:

  • High-index-contrast integrated photonic technologies offer miniaturization potential.
  • Phase errors in multimode interference couplers (MMIs) limit performance in these platforms.
  • Existing MMI designs struggle to balance compactness and phase accuracy.

Purpose of the Study:

  • To propose and validate a novel MMI design for high-index-contrast photonics.
  • To reduce phase errors inherent in high-index-contrast waveguides.
  • To achieve a compact and efficient 2x4 MMI operating as a 90° hybrid.

Main Methods:

  • A new MMI design featuring a shallowly etched multimode region directly coupled to deeply etched waveguides.
  • Fabrication of a 2x4 MMI device on a high-index-contrast platform.
  • Experimental characterization of the MMI's performance, including common mode rejection ratio and phase errors.

Main Results:

  • Demonstration of a compact 2x4 MMI with a footprint of 0.65 mm x 0.53 mm.
  • Achieved common mode rejection ratio better than -20 dBe.
  • Measured phase errors within ±5° over a ~50 nm bandwidth.

Conclusions:

  • The proposed MMI design effectively mitigates phase errors in high-index-contrast technologies.
  • This approach enables highly compact and efficient photonic devices.
  • The demonstrated 90° hybrid performance opens avenues for advanced optical signal processing.