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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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InGaN-based light-emitting diodes with an embedded conical air-voids structure.

Yu-Chieh Huang¹, Chia-Feng Lin, Sy-Hann Chen

¹Department of Materials Science and Engineering, National Chung Hsing University,Taichung 402, Taiwan.

|January 26, 2011

Summary

Researchers developed a conical air-void structure in Indium Gallium Nitride (InGaN) light-emitting diodes (LEDs) to boost light output. This novel structure significantly enhances light extraction efficiency and reduces strain in the LEDs.

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Published on: June 16, 2016

Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Indium Gallium Nitride (InGaN) light-emitting diodes (LEDs) are crucial for modern lighting and displays.
Improving light extraction efficiency (LEE) in LEDs remains a key challenge.
Internal strain at the GaN/sapphire interface can negatively impact LED performance.

Purpose of the Study:

To engineer a conical air-void structure at the GaN/sapphire interface.
To enhance the light extraction efficiency of InGaN LEDs.
To investigate the effects of the conical air-void structure on LED performance and strain.

Main Methods:

Fabrication of the conical air-void structure using a combination of dry etching and crystallographic wet etching on an undoped GaN layer.
Re-growth of the InGaN LED structure on the fabricated substrate.
Characterization of optical output power, divergence angle, electroluminescence, and photoluminescence spectra.

Main Results:

A 1.54-fold increase in light output power at 20 mA operation current was observed.
A reduced divergent angle of 120° was achieved.
Periodic variations in emission intensity and peak wavelength correlated with the conical air-void patterns.
Reduced compressive strain at the GaN/sapphire interface, evidenced by wavelength blueshift and increased internal quantum efficiency.

Conclusions:

The conical air-void structure effectively enhances light extraction efficiency in InGaN LEDs.
This structure mitigates compressive strain, leading to improved optical properties and higher internal quantum efficiency.
The findings offer a promising pathway for developing high-performance InGaN-based optoelectronic devices.