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Updated: Jun 4, 2026
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Spectroscopic characterization of charged defects in polycrystalline pentacene by time- and wavelength-resolved
Justin L Luria1, Kathleen A Schwarz, Michael J Jaquith
1Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853-1301, USA.
Advanced Materials (Deerfield Beach, Fla.)
|January 29, 2011
Abstract:
Spatial maps of topography and trapped charge are acquired for polycrystalline pentacene thin-film transistors using electric and atomic force microscopy. In regions of trapped charge, the rate of trap clearing is studied as a function of the wavelength of incident radiation.
