Directed 2D-to-3D pattern transfer method for controlled fabrication of topologically complex 3D features in silicon

Konrad Rykaczewski1, Owen J Hildreth, Ching P Wong

  • 1Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899-8370, USA. konrad.rykaczewski@nist.gov

Summary

Researchers demonstrate precise 3D control of catalyst nanostructures during etching. Local pinning enables rotational geometry in etched silicon features, advancing nanofabrication techniques.

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