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Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
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Grain boundary mapping in polycrystalline graphene.

Kwanpyo Kim1, Zonghoon Lee, William Regan

  • 1Department of Physics and Center of Integrated Nanomechanical Systems, University of California at Berkeley, Berkeley, California 94720, United States.

ACS Nano
|February 2, 2011
PubMed
Summary

Directly map graphene grains and grain boundaries at atomic scales using advanced electron microscopy techniques. This provides a new tool for studying the structure and properties of polycrystalline graphene sheets.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Physics

Background:

  • Polycrystalline graphene sheets are crucial for next-generation electronics.
  • Understanding grain boundaries (GBs) is essential for controlling graphene's properties.
  • Direct atomic-scale characterization of graphene GBs remains challenging.

Purpose of the Study:

  • To develop and demonstrate a method for direct, large-scale mapping of grains and GBs in monolayer polycrystalline graphene.
  • To visualize the atomic structure of graphene GBs at high resolution.

Main Methods:

  • Utilized scanning transmission electron microscopy (STEM) with electron diffraction for global grain and GB mapping.
  • Employed conventional transmission electron microscopy (TEM) with dark-field imaging for large-area mapping.

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  • Applied aberration-corrected TEM to obtain atomic-resolution images of graphene GBs.

    • Main Results:

    • Successfully mapped grains and GBs in large-area monolayer polycrystalline graphene sheets.
    • Achieved mapping at both micrometer and single-atom length scales.
    • Revealed the characteristic alternating pentagon-heptagon atomic structure along high-angle GBs.

    Conclusions:

    • Established a direct mapping technique for graphene grains and GBs.
    • The method is adaptable for various graphene GB studies.
    • Provides insights into the atomic structure of graphene GBs, crucial for material optimization.