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Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
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Communication: Highest occupied molecular orbital-lowest unoccupied molecular orbital gaps of doped silicon clusters

J T Lau1, M Vogel, A Langenberg

  • 1Institut für Methoden und Instrumentierung der Synchrotronstrahlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, G-I2, Albert-Einstein-Straße 15, 12489 Berlin, Germany. tobias.lau@helmholtz-berlin.de

The Journal of Chemical Physics
|February 2, 2011
PubMed

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