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Updated: Jun 4, 2026
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Controlled modulation of electronic properties of graphene by self-assembled monolayers on SiO2 substrates
Zheng Yan1, Zhengzong Sun, Wei Lu
1Richard E. Smalley Institute for Nanoscale Science and Technology, Department of Chemistry, Rice University, 6100 Main Street, Houston, Texas 77005, USA.
Abstract:
In this study, with self-assembled monolayers (SAMs) of aminopropyl-, ammoniumpropyl-, butyl-, and 1H,1H,2H,2H-perfluorooctyltriethoxysilanes deposited in-between graphene and the SiO(2) substrate, a controlled doping of graphene was realized with a threshold voltage ranging from -18 to 30 V. In addition, the SAMs are covalently bonded to the SiO(2) surface rather than the graphene surface, thereby producing minimal effects on the mobility of the graphene. Finally, it is more stable than conventional noncovalent dopants.
