Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Low-Dose Neostigmine at 0.7 Train-of-Four Ratio Safely Accelerates Neuromuscular Recovery: A Prospective Observational Study.

Drug design, development and therapy·2026
Same author

Comparative effects of sevoflurane and desflurane on postoperative renal function in patients with type 2 Diabetes mellitus.

Renal failure·2025
Same author

Liberal Fluid Therapy Increases Postoperative Acute Kidney Injury in Patients Undergoing Laparoscopic Sleeve Gastrectomy with Dexmedetomidine.

Obesity surgery·2025
Same author

Effect of intraoperative administration of magnesium on residual neuromuscular blockade: a retrospective cohort study.

Magnesium research·2025
Same author

Synthetic homoisoflavane derivatives suppress the growth of colorectal cancer cells by disturbing microtubule dynamics.

Biochemical pharmacology·2025
Same author

Feasibility of a Machine Learning Classifier for Predicting Post-Induction Hypotension in Non-Cardiac Surgery.

Yonsei medical journal·2025

Related Experiment Video

Updated: Jun 4, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Ultrahigh mobility in polymer field-effect transistors by design.

Hoi Nok Tsao1, Don M Cho, Insun Park

  • 1Max Planck Institute for Polymer Research, Mainz, Germany.

Journal of the American Chemical Society
|February 5, 2011
PubMed
Summary

High molecular weight in donor-acceptor copolymers significantly boosts hole mobilities in field-effect transistors (FETs). This research explores polymer design for advanced organic semiconductors with ultrahigh charge carrier performance.

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Related Experiment Videos

Last Updated: Jun 4, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Area of Science:

  • Organic electronics
  • Materials science
  • Semiconductor physics

Background:

  • Donor-acceptor copolymers are crucial for organic electronics.
  • Optimizing polymer design is key to achieving high charge carrier mobility in field-effect transistors (FETs).
  • Understanding structure-property relationships is essential for developing advanced organic semiconductors.

Purpose of the Study:

  • To investigate the impact of molecular weight, alkyl substituents, and donor-acceptor interactions on the performance of cyclopentadithiophene-benzothiadiazole (CDT-BTZ) copolymers.
  • To correlate polymer design parameters with thin-film morphology, crystallinity, and charge transport properties.
  • To establish design principles for organic semiconductors with ultrahigh hole mobilities.

Main Methods:

  • Synthesis and characterization of CDT-BTZ copolymers with varying molecular weights.
  • Fabrication and electrical characterization of field-effect transistors (FETs).
  • Analysis of thin-film morphology and crystallinity using techniques like X-ray diffraction.
  • Solid-state nuclear magnetic resonance (NMR) spectroscopy to probe intermolecular interactions.

Main Results:

  • Hole mobilities in CDT-BTZ based FETs reached up to 3.3 cm(2) V(-1) s(-1), strongly dependent on molecular weight.
  • Increased molecular weight led to improved crystallinity without significant changes in thin-film morphology.
  • Donor-acceptor interactions and alkyl substituents were identified as critical factors influencing intermolecular stacking and charge transport.

Conclusions:

  • Molecular weight is a primary determinant for achieving ultrahigh hole mobilities in CDT-BTZ copolymers.
  • Enhanced crystallinity, driven by higher molecular weight, is crucial for improved charge transport.
  • The findings provide valuable polymer design guidelines for future organic semiconductors targeting mobilities exceeding 3 cm(2) V(-1) s(-1).