A reproducible route to p-ZnO films and their application in light-emitting devices
1Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
Abstract:
Although great efforts have been made, reproducible p-type doping is still one of the largest hurdles that hinders the optoelectronic applications of ZnO. In this Letter, a reproducible route to p-type ZnO films employing lithium-nitrogen as a dual-acceptor dopant has been demonstrated, and p-i-n structured light-emitting devices (LEDs) have been constructed. Obvious purple emissions have been observed from the LEDs, confirming the applicability of the p-type ZnO films in optoelectronic devices. The results reported in this Letter provide a reproducible route to p-type ZnO films, and thus may lay a solid ground for future optoelectronic applications of ZnO.


