Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Interference and Diffraction02:18

Interference and Diffraction

Interference is a characteristic phenomenon exhibited by waves. When two electromagnetic waves interact with their peaks and troughs coinciding, a resulting wave with enhanced amplitude is produced. This is known as constructive interference. In this case, the two waves interacting are in phase with each other.
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Interference and Superposition of Waves01:07

Interference and Superposition of Waves

When two waves of the same nature occur in the same region simultaneously, they result in interference. Interference of waves implies that the net effect of the waves is the sum of the individual waves' effects. However, it does not imply that the individual waves affect the propagation of other waves.
Interference occurs in mechanical waves, such as sound waves, waves on a string, and surface water waves. Mechanical waves correspond to the physical displacement of particles. Hence,...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Associations between diet and physical activity and mental health among Catalan youth.

Archives of public health = Archives belges de sante publique·2026
Same author

One year of surgical mask testing at the University of Bologna labs: Lessons learned from data analysis.

Separation and purification technology·2022
Same author

Variability of PM10 in industrialized-urban areas. New coefficients to establish significant differences between sampling points.

Environmental pollution (Barking, Essex : 1987)·2018
Same author

COLONIZATION OF AMERICA BY DROSOPHILA SUBOBSCURA: LETHAL GENES AND THE PROBLEM OF THE O<sub>5</sub> INVERSION.

Evolution; international journal of organic evolution·2017
Same author

COLONIZATION OF AMERICA BY DROSOPHILA SUBOBSCURA: ANALYSIS OF THE O<sub>5</sub> INVERSIONS FROM EUROPE AND AMERICA AND THEIR IMPLICATIONS FOR THE COLONIZING PROCESS.

Evolution; international journal of organic evolution·2017
Same author

Recurrent fetal thyrotoxicosis in woman with history of Hashimoto's thyroiditis.

Ultrasound in obstetrics & gynecology : the official journal of the International Society of Ultrasound in Obstetrics and Gynecology·2017

Related Experiment Video

Updated: Jun 4, 2026

Fabrication and Characterization of Superconducting Resonators
10:26

Fabrication and Characterization of Superconducting Resonators

Published on: May 21, 2016

Interference of Fano-Rashba conductance dips.

M M Gelabert1, A Renart, L Serra

  • 1Departament de Física, Universitat de les Illes Balears, Palma de Mallorca, Spain.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|March 2, 2011
PubMed
Summary

Interference in quantum wires with two Rashba regions shows distinct transmission behaviors. Depending on separation, Fano-Rashba dips cross or anti-cross, revealing Fabry-Perot oscillations or enhanced transmission from evanescent modes.

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

Related Experiment Videos

Last Updated: Jun 4, 2026

Fabrication and Characterization of Superconducting Resonators
10:26

Fabrication and Characterization of Superconducting Resonators

Published on: May 21, 2016

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

Area of Science:

  • Condensed matter physics
  • Quantum mechanics
  • Mesoscopic physics

Background:

  • Quantum wires support single propagating modes.
  • Tunable Rashba spin-orbit interaction influences electron transport.
  • Interference phenomena are crucial in nanoscale devices.

Purpose of the Study:

  • Investigate the interference effects of two tunable Rashba regions in a quantum wire.
  • Analyze how the distance between regions affects transmission properties.
  • Explore the role of evanescent modes at short separations.

Main Methods:

  • Utilized scattering matrix theory for analytical expressions.
  • Modeled a quantum wire with one propagating mode.
  • Simulated interference patterns based on region separation.

Main Results:

  • Observed transmission dips (Fano-Rashba dips) that either cross or anti-cross.
  • Identified Fabry-Perot oscillations at large separations due to mode interference.
  • Found enhanced transmission and destruction of conductance dips at small separations due to overlapping evanescent modes.

Conclusions:

  • The spatial separation of tunable Rashba regions dictates interference outcomes.
  • Evanescent mode overlap significantly alters quantum transport at short distances.
  • Understanding these interference effects is vital for designing quantum devices.