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Transmission line based short pulse generation circuits in a 0.13 μm complementary metal-oxide-semiconductor
Huan Zou1, Yongtao Geng, Pingshan Wang
1Department of Physical Electronics, University of Electronics Science and Technology of China, Chengdu, Sichuan, China. hzou82@gmail.com
The Review of Scientific Instruments
|March 3, 2011
Summary
Researchers implemented traditional pulse forming circuits (PFLs) using CMOS technology, achieving short pulses of ~170 ps. This demonstrates CMOS
Area of Science:
- Electrical Engineering
- Microelectronics
- Integrated Circuit Design
Background:
- Traditional pulse forming circuits (PFLs) are crucial for generating short, high-power electrical pulses.
- Implementing these circuits in standard CMOS technology offers a pathway for cost-effective, on-chip pulse generation.
Purpose of the Study:
- To implement and compare traditional pulse forming circuits in a commercial 0.13 μm digital CMOS technology.
- To analyze the performance of these circuits for high-power, short pulse generation applications.
Main Methods:
- Utilized standard on-chip transmission lines as pulse forming lines (PFLs).
- Employed CMOS transistors as switching elements.
- Conducted Cadence Spectre simulations to analyze output pulse characteristics.
- Fabricated the designed CMOS circuits using commercial technology.
Main Results:
- Achieved output pulses with durations of approximately 170 picoseconds (ps).
- Observed pulse amplitudes ranging from 120 to 400 millivolts (mV).
- Demonstrated successful pulse generation across a power supply range of 1.2 to 2 V.
Conclusions:
- Traditional PFL-based circuits are viable for implementation in standard CMOS technology for high-power short pulse generation.
- These PFL circuits significantly enhance the short pulse generation capabilities inherent in CMOS technologies.
- The findings pave the way for integrated, on-chip solutions for advanced pulse generation.
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