All-optical memory based on injection-locking bistability in photonic crystal lasers

Area of Science:

• Photonics
• Optoelectronics
• Semiconductor Lasers

Background:

• All-optical memory is crucial for high-speed optical computing.
• Previous optical memory devices often require high power consumption and large footprints.
• Semiconductor lasers offer potential for compact and efficient optical memory solutions.

Purpose of the Study:

• To demonstrate an all-optical memory utilizing InGaAsP/InP buried heterostructure photonic crystal (BH-PhC) lasers.
• To investigate the performance of BH-PhC lasers in achieving optical bistability and dynamic memory operations.
• To achieve ultra-low power consumption and fast switching times in an all-optical memory device.

Main Methods:

• Fabrication of InGaAsP/InP buried heterostructure photonic crystal (BH-PhC) lasers.
• Experimental demonstration of optical injection locking bistability.
• Characterization of pump power, switching power, and switching times for dynamic memory operations.

Main Results:

• Achieved distinct optical injection locking bistability in an ultra-compact active region (4 × 0.3 × 0.16 μm3).
• Required only 25 μW pump power, two orders of magnitude lower than previous optical memories.
• Demonstrated dynamic memory operations with 100 μW pump power and switching powers of 22 μW and 71 μW.
• Attained fast switching times of approximately 60 ps.

Conclusions:

• This work presents the first demonstration of a photonic crystal laser-based all-optical memory.
• The developed BH-PhC laser offers a highly efficient and compact solution for all-optical memory applications.
• The low power requirements and fast switching speeds pave the way for future optical processing systems.