Analytical model for depletion-based silicon modulator simulation

Area of Science:

• Photonics and Optical Engineering
• Semiconductor Device Simulation
• Integrated Optics

Background:

• Silicon modulators are crucial components in optical communication systems.
• Accurate and efficient simulation methods are needed for device design and optimization.
• Existing simulation techniques can be computationally intensive.

Purpose of the Study:

• To present an original analytical method for simulating depletion-based silicon modulators.
• To demonstrate the method's speed and efficiency for performance optimization.
• To validate the analytical method against established numerical simulations.

Main Methods:

• Developing an analytical description of the active region in silicon modulators.
• Implementing the analytical model for a lateral diode integrated in a rib waveguide.
• Comparing simulation results with classical 2D numerical simulations.

Main Results:

• The analytical method provides a fast and efficient simulation of silicon modulators.
• Excellent agreement was achieved between the analytical method and 2D numerical simulations.
• The study confirms the accuracy and efficiency of the proposed analytical approach.

Conclusions:

• The presented analytical method is a viable and effective tool for simulating depletion-based silicon modulators.
• This approach facilitates rapid performance optimization of silicon photonic devices.
• The method offers a significant advantage in terms of computational speed and efficiency.