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Updated: Jun 4, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Ojas P Kulkarni1, Mohammed N Islam, Fred L Terry
1Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA. ojaspk@umich.edu
This study demonstrates a novel Gallium Arsenide (GaAs)-based optical modulator. This device offers superior modulation depth and potential for higher speeds compared to silicon (Si) devices, suitable for advanced networks.
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