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Related Experiment Video

Updated: Jun 4, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot.

V B Verma¹, Martin J Stevens, K L Silverman

¹Optoelectronics Division, National Institute of Standards and Technology, Boulder, Colorado 80305, USA. verma@nist.gov

|March 4, 2011

Summary

Researchers created a single photon source using a quantum dot. The device exhibited photon antibunching, a key characteristic for single photon emission, with a measured value below the required threshold.

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Last Updated: Jun 4, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection

Published on: October 13, 2017

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Published on: November 1, 2013

Compact Quantum Dots for Single-molecule Imaging

Compact Quantum Dots for Single-molecule Imaging

Published on: October 9, 2012

Area of Science:

Quantum physics
Materials science
Nanotechnology

Background:

Single photon sources are crucial for quantum technologies.
Quantum dots offer potential as scalable single photon emitters.
Fabrication challenges exist for creating high-quality quantum dots.

Purpose of the Study:

To demonstrate photon antibunching from a single quantum dot.
To assess the quantum dot's suitability as a single photon source.

Main Methods:

Fabrication of a single quantum dot using electron beam lithography, wet chemical etching, and metalorganic chemical vapor deposition.
Measurement of the second-order autocorrelation function (g(2)(t)).

Main Results:

Successful fabrication of a lithographically defined single quantum dot.
Measured second-order autocorrelation function g(2)(0) = 0.395 ± 0.030.
The g(2)(0) value is below the 0.5 threshold, confirming photon antibunching.

Conclusions:

The fabricated quantum dot functions as a single photon source.
The results demonstrate a viable method for creating quantum dot-based single photon emitters.