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Updated: Jun 4, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Integrated array of 2-μm antimonide-based single-photon counting devices
M A Diagne1, M Greszik, E K Duerr
1Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420-9108, USA. mdiagne@ll.mit.edu
Abstract:
A 32x32 Sb-based Geiger-mode (GM) avalanche photodiode array, operating at 2 μm with three-dimensional imaging capability, is presented. The array is interfaced with a ROIC (readout integrated circuit) in which each pixel can detect a photon and record the arrival time. The hybridized unit for the 1000-element focal plane array, when operated at 77K with 1 V overbias range, shows an average dark count rate of 1.5 kHz. Three-dimensional range images of objects were acquired.

