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Updated: Jun 3, 2026

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Fabrication and Optimization of Type II Silicon Clathrate Films
Published on: October 14, 2025
Semiconducting behavior of type-I Si clathrate K8Ga8Si38
Motoharu Imai1, Akira Sato, Haruhiko Udono
1National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. IMAI.Motoharu@nims.go.jp
Dalton Transactions (Cambridge, England : 2003)
|March 9, 2011
Abstract:
A ternary type-I Si clathrate K(8)Ga(8)Si(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E(g)) of approximately 0.10 eV, which is much smaller than the calculated E(g) value that is 0.15 eV wider than E(g) of elemental Si with the diamond-type structure.
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