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Ga and As composition profiles in InP/GaInAs/InP heterostructures--x-ray CTR scattering and cross-sectional STM
Yoshikazu Takeda1, Masao Tabuchi, Arao Nakamura
1Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan. takeda@numse.nagoya-u.ac.jp
Abstract:
Changes of composition profiles in GaInAs layers sandwiched by InP, due to the layer thicknesses, were measured by the x-ray CTR scattering and cross-sectional STM techniques. Both techniques showed quite similar results, which indicates that the x-ray CTR scattering measurements and analyses give us correct composition profiles both for group-III and group-V atoms in the buried heterostructures non-destructively. Limits of the CTR analysis are discussed, especially on the spatial resolution and composition grading below the bottom interface.
