MOS Capacitor
Atomic Absorption Spectroscopy: Atomization Methods
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Jun 3, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
P Karmakar1, S Bhattacharjee, V Naik
1RIB Laboratory, Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700 064, India. prasantak@veccal.ernet.in
Multiply charged ions enhance sputtering of silicon oxide surfaces. Higher ion energy increases sputtering yield on non-conducting oxide compared to semiconducting silicon, demonstrating potential for nanostructure tailoring.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: