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Coulomb explosion sputtering of selectively oxidized Si.

P Karmakar1, S Bhattacharjee, V Naik

  • 1RIB Laboratory, Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700 064, India. prasantak@veccal.ernet.in

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Multiply charged ions enhance sputtering of silicon oxide surfaces. Higher ion energy increases sputtering yield on non-conducting oxide compared to semiconducting silicon, demonstrating potential for nanostructure tailoring.

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Area of Science:

  • Surface science
  • Materials science
  • Ion-surface interactions

Background:

  • Silicon (Si) and silicon oxide (SiO2) surfaces exhibit distinct properties.
  • Oblique angle oxygen ion bombardment on Si(100) creates unique oxidized ripple structures.
  • Multiply charged ions (MCI) possess high potential energy.

Purpose of the Study:

  • Investigate the sputtering behavior of coexisting Si and SiO2 surfaces under MCI impact.
  • Determine the influence of ion potential energy on sputtering yield.
  • Explore the application of MCI for nanostructure modification.

Main Methods:

  • Fabrication of oxidized ripple structures on Si(100) via oxygen ion bombardment.
  • Sputtering experiments using multiply charged Argon ions (Ar(q+)).
  • Surface analysis using Atomic Force Microscopy (AFM) and Conducting Atomic Force Microscopy (CAFM).

Main Results:

  • Sputtering yield is significantly higher on the non-conducting SiO2 side compared to the semiconducting Si side.
  • Increased sputtering yield correlates directly with the potential energy of the incident Ar(q+) ions.
  • Coulomb explosion model explains the observed preferential sputtering based on surface conductivity.

Conclusions:

  • Multiply charged ions enable selective sputtering of nanostructured surfaces.
  • Potential energy of ions is a critical factor in sputtering yield, especially for insulating materials.
  • Highly charged ions offer a promising tool for precise nanostructure cleaning and tailoring.