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Published on: May 28, 2016
Electronic structure of Bi lines on clean and H-passivated Si(100)
Jakub Javorský1, James Hugh Gervase Owen, Martin Setvín
1National Research Institute for Materials Science, Tsukuba 305-0044, Japan. jakub.javorsky@post.cz
Abstract:
By means of scanning tunnelling microscopy and spectroscopy, we have investigated the electronic structure of Bi nanolines on clean and H-passivated Si(100) surfaces. Maps of the local density of states (LDOS) images of the Bi nanolines are presented for the first time. The spectra obtained for nanolines on a clean Si surface and the LDOS images agree with ab initio predicted spectra for the Haiku structure. For nanolines on a H-passivated surface, the spectra obtained suggest that the Bi nanoline may locally pin the surface Fermi level, and the LDOS images taken at low bias show a distribution of states different to what was expected at the Bi nanolines. The results are discussed with respect to use of the nanolines as atomic wire interconnections.

