Double-layer imprint lithography on wafers and foils from the submicrometer to the millimeter scale

In this paper, a thermal imprint technique, double-layer nanoimprint lithography (dlNIL), is introduced, allowing complete filling of features in the dimensional range of submicrometer to millimeter. The imprinting and filling quality of dlNIL was studied on Si substrates as a model system and compared to results obtained with regular NIL (NIL) and reverse NIL (rNIL). Wavy foils were imprinted with NIL, rNIL and dlNIL and the patterning results compared and discussed. With dlNIL, a new application possibility was introduced in which two different resists having, for example, a different etch resistance to a certain plasma were combined within one imprint step. dlNIL allows extension to many resist combinations for tailored nanostructure fabrication.